Overview
Write the analysis section for NMOSFETS Threshhold voltage. Mainly focus on the threshold voltage theoretical calculations, I would include the equation and figure out what the work functions are and actually calculate Vt. Create graphs using excel and calculate the Vt. I have samples for your kind reference of equations and graphs. The excel data is also attached below. The length does not matter as long as the main objectives are completed. Plz add the real wafer data, which is in the our wafer tab, and just reference them and say something about Vt. Only do the Threshhold voltage part, no need for mobility.
Next, you need to plot ID-VD and ID-VG curves for NMOSFET with L = 10 μm and perform the
following analyses with your data,
(a) Plot VT vs. L for Case A-I, and VT vs. W for Case B. Calculate the theoretical VT for both
cases and compare them with the experimental values.
(b) Plot gm vs. VG when VD = 0.1 and 4 V from a NMOSFET with L = 10 μm, and compare
the plot with the theoretical calculation.
(c) Plot μn (electron mobility) vs. VG when VD = 0.1 V from a NMOSFET with L = 10 μm,
and explain why the behavior is.